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PDF DMS2095LFDB Data sheet ( Hoja de datos )
| Número de pieza | DMS2095LFDB | |
| Descripción | P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Product Summary
V(BR)DSS
-20V
VR
20V
MOSFET
RDS(on) max
95mΩ @ VGS = -4.5V
120mΩ @ VGS = -2.5V
150mΩ @ VGS = -1.8V
SCHOTTKY DIODE
VF max
400mV @ IF = 0.5A
470mV @ IF = 1.0A
ID
-3.4A
-3.0A
-2.7A
IO
1.0A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Power management functions
DMS2095LFDB
P-CHANNEL ENHANCEMENT MODE MOSFET
WITH INTEGRATED SCHOTTKY DIODE
Features and Benefits
• MOSFET with Low RDS(ON) – minimize conduction losses
• Low Gate Threshold Voltage, -1.3V Max
• Schottky Diode with Low Forward Voltage Drop
• Low Profile, 0.5mm Max Height
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: U-DFN2020-6 Type B
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e4
• Weight: 0.0065 grams (approximate)
U-DFN2020-6
Type B
S
D
G
D
NC
Pin1
A
K
Bottom View
K
DA
G
S
Q1 P-MOSFET
K
D1 SCHOTTKY DIODE
Ordering Information (Note 4)
Notes:
Part Number
DMS2095LFDB-7
DMS2095LFDB-13
Case
U-DFN2020-6 Type B
U-DFN2020-6 Type B
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
DMS2095LFDB
Document number: DS35955 Rev. 3 - 2
MS2
MS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
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2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
April 2014
© Diodes Incorporated
1 page  
DMS2095LFDB
MOSFET Characteristics (cont.)
1 10
9
0.8 8
-ID = 1mA
0.6
7
6
-ID = 250µA
0.4
0.2
5 TA= 150°C
4
TA= 125°C
3
TA= 85°C
2
TA= 25°C
0
-50 -25 0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
1 TA= -55°C
0 0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10000
1000
f = 1MHz
Ciss
100
Crss
Coss
10
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
10
9
8
7
6
5 VDS = -10V
4 ID = -2.5A
3
2
1
00 3 6 9 12 15
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
0.001
0.00001
0.0001
DMS2095LFDB
Document number: DS35955 Rev. 3 - 2
RθJA(t) = r(t) * RθJA
RθJA = 155°C/W
Duty Cycle, D = t1/ t2
0.001
0.01 0.1
1
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
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10
100 1000
April 2014
© Diodes Incorporated
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