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PDF DMS2085LSD Data sheet ( Hoja de datos )

Número de pieza DMS2085LSD
Descripción P-CHANNEL ENHANCEMENT MODE MOSFET
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No Preview Available ! DMS2085LSD Hoja de datos, Descripción, Manual

DMS2085LSD
P-CHANNEL ENHANCEMENT MODE MOSFET
WITH INTEGRATED SCHOTTKY DIODE
Product Summary
V(BR)DSS
-20V
VR
20V
MOSFET
RDS(on) max
85mΩ @ VGS = -10V
125mΩ @ VGS = -4.5V
SCHOTTKY DIODE
VF max
400mV @ IF = 0.5A
470mV @ IF = 1.0A
ID
-3.3A
-2.8A
IO
1.0A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Backlighting
AK
AK
SD
GD
Features and Benefits
Low Input Capacitance
MOSFET with Low RDS(ON) – Minimize Conduction Losses
Schottky Diode with Low Forward Voltage Drop
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.074 grams (approximate)
DA
G
Top View
Top View
Internal Schematic
S
Q1 P-Channel MOSFET
K
D1 Schottky Diode
Ordering Information (Note 4)
Notes:
Part Number
DMS2085LSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
S2085LD
YY WW
14
Chengdu A/T Site
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
85
S2085LD
YY WW
14
Shanghai A/T Site
= Manufacturer’s Marking
S2085LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 7
www.diodes.com
August 2014
© Diodes Incorporated

1 page




DMS2085LSD pdf
1000
Ciss
100
Coss
Crss
f = 1MHz
10
0 5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 ypical Junction Capacitance
100
RDS(on)
Limited
30
10
DC
1 PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.1 TJ(max) = 150°C
TA = 25°C
VGS = 4.5V
Single Pulse
PW = 1ms
PW = 100µs
0.01 DUT on 1 * MRP Board
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
100
DMS2085LSD
10
8
6
VDS = -15V
ID = -3A
4
2
00 1 2 3 4 5 6 7 8
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
5 of 7
www.diodes.com
August 2014
© Diodes Incorporated

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