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PDF CHK015A-QIA Data sheet ( Hoja de datos )
| Número de pieza | CHK015A-QIA | |
| Descripción | 15W Power Packaged Transistor | |
| Fabricantes | United Monolithic Semiconductors | |
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CHK015A-QIA
15W Power Packaged Transistor
GaN HEMT on SiC
Description
The CHK015A-QIA is an unmatched
packaged Gallium Nitride High Electron
Mobility Transistor.
It offers general purpose and broadband
solutions for a variety of RF power
applications. It is well suited for multi-purpose
applications such as radar and
telecommunication.
The CHK015A-QIA is developed on a 0.5µm
gate length GaN HEMT process. It requires
an external matching circuitry.
It is proposed in low cost plastic package
providing low parasitic and low thermal
resistance.
Main Features
■ Wide band capability: up to 6GHz
■ Pulsed and CW operating modes
■ High power: > 15W
■ High Efficiency: up to 70%
■ DC bias: Vd=50Volt @ Id=100mA
■ Low cost package: 14L-DFN3x4
■ MTTF > 106 hours @ Tj=200°C
VDS = 50V, ID_Q = 100mA, Freq = 2.9GHz
Pulsed mode (100µs, 10%)
55 1.8
50 1.6
45 1.4
40 Pout
35
1.2
1
30 PAE
25
20
15
ID
Gain
0.8
0.6
0.4
0.2
10 0
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Input Power (dBm)
Performances on S-band Evaluation Board
Main Electrical Characteristics
Tcase= +25°C, Pulsed mode, F = 3GHz, VDS=50V, ID_Q=100mA
Symbol
Parameter
Min Typ Max Unit
Gain Linear Gain
18 20
dB
Pout Output Power
15 20
W
PAE Max Power Added Efficiency
60 %
GPAE_MAX Associated Gain at Max PAE
16 dB
Ref. : DSCHK015A-QIA5357 - 23 Dec 15
1/18 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
1 page  
15W Power Packaged Transistor
CHK015A-QIA
Typical Simulated S-parameters
Tcase = +25°C. CW mode. VDS=50V. ID_Q=100mA.
0
-1
-2
-3
-4
-5
-6
-7
-8
01234567
Frequency (GHz)
S11
S22
8 9 10 11
40
30 S21
S12+20dB
20
10
0
-10
-20
-30
-40
0 1 2 3 4 5 6 7 8 9 10 11
Frequency (GHz)
Ref. : DSCHK015A-QIA5357 - 23 Dec 15
5/18 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
5 Page 
15W Power Packaged Transistor
CHK015A-QIA
Typical Performance in Temperature (on Evaluation Board)
Calibration and measurements are done on the connector access planes of the evaluation
boards.
Tamb. = -40°C, +25°C, +85°C, CW mode. VDS=50V, ID_Q=100mA (fixed @ +25°C)
Linear Gain versus temperature with ID_Q fixed @ each temperature (100mA)
25
20
15 25 C
10
-40 C
85 C
5
0
2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4
Frequency (GHz)
Input Return Loss versus temperature with ID_Q fixed @ each temperature (100mA)
0
-40 C
-5
25 C
85 C
-10
-15
2
2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8
Frequency (GHz)
4
Ref. : DSCHK015A-QIA5357 - 23 Dec 15
11/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet CHK015A-QIA.PDF ] | |
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