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ROHM Semiconductor - SiC Schottky Barrier Diode Bare Die

Numéro de référence S6304
Description SiC Schottky Barrier Diode Bare Die
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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S6304 fiche technique
S6304
SiC Schottky Barrier Diode Bare Die
VR 1200V
IF 20A*1
QC 65nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lInner circuit
(C)
(A)
Data Sheet
(C) Cathode
(A) Anode
lConstruction
Silicon carbide epitaxial planer type
Schottky diode
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Junction temperature
VRM 1200
VR 1200
IF 20*1
82*2
IFSM
310*3
62*4
IFRM
77*5
Tj 175
Range of storage temperature
Tstg
-55 to +175
*1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Duty cycle=10%, limited by Tj
Unit
V
V
A
A
A
A
A
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/3
2014.05 - Rev.A

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