|
|
Numéro de référence | S6304 | ||
Description | SiC Schottky Barrier Diode Bare Die | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
S6304
SiC Schottky Barrier Diode Bare Die
VR 1200V
IF 20A*1
QC 65nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lInner circuit
(C)
(A)
Data Sheet
(C) Cathode
(A) Anode
lConstruction
Silicon carbide epitaxial planer type
Schottky diode
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Junction temperature
VRM 1200
VR 1200
IF 20*1
82*2
IFSM
310*3
62*4
IFRM
77*5
Tj 175
Range of storage temperature
Tstg
-55 to +175
*1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Duty cycle=10%, limited by Tj
Unit
V
V
A
A
A
A
A
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/3
2014.05 - Rev.A
|
|||
Pages | Pages 4 | ||
Télécharger | [ S6304 ] |
No | Description détaillée | Fabricant |
S6301 | SiC Schottky Barrier Diode Bare Die | ROHM Semiconductor |
S6302 | SiC Schottky Barrier Diode Bare Die | ROHM Semiconductor |
S6304 | SiC Schottky Barrier Diode Bare Die | ROHM Semiconductor |
S6305MG | Red Laser Diode | Roithner LaserTechnik |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |