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N.º Número de pieza Descripción Fabricantes Category


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N.º Número de pieza Descripción Fabricantes Catagory
1RFG30P0530A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs

RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 File Number 2436.4 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic
Intersil Corporation
Intersil Corporation		mosfet
2RFG30P0630A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs

RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic
Intersil Corporation
Intersil Corporation		mosfet
3RFG40N1040A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of
Fairchild Semiconductor
Fairchild Semiconductor		mosfet
4RFG40N1040A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs

RFG40N10, RFP40N10, RF1S40N10SM Data Sheet July 1999 File Number 2431.3 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizati
Intersil Corporation
Intersil Corporation		mosfet
5RFG40N10LE40A/ 100V/ 0.040 Ohm/ Logic Level N-Channel Power MOSFETs

RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approa
Intersil Corporation
Intersil Corporation		mosfet
6RFG45N0645A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

S E M I C O N D U C T O R RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) December 1995 Features • 45A, 60V • rDS(ON) = 0.028Ω • Temperature Compensating P
Fairchild Semiconductor
Fairchild Semiconductor		mosfet
7RFG45N0645A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETs

RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 File Number 3574.4 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of
Intersil Corporation
Intersil Corporation		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

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