(PDF) BFR193F Datasheet - Low Noise Silicon Bipolar RF Transistor

Número de pieza	BFR193F
Descripción	Low Noise Silicon Bipolar RF Transistor
Fabricantes	Infineon
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No Preview Available ! Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free product • Qualification report according to AEC-Q101 available BFR193F 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR193F Marking Pin Configuration RCs 1=B 2=E 3=C Package TSFP-3 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 72°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 12 20 20 2 80 10 580 150 -55 ... 150 V mA mW °C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 135 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2013-11-07 1 page Package TSFP-3 BFR193F 5 2013-11-07 5 Page

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PDF BFR193F Data sheet ( Hoja de datos )