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DMP3100L fiches techniques PDF

Diodes - P-CHANNEL ENHANCEMENT MODE MOSFET

Numéro de référence DMP3100L
Description P-CHANNEL ENHANCEMENT MODE MOSFET
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DMP3100L fiche technique
DMP3100L
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance:
100m@ VGS = -10V, ID = -2.7A
170m@ VGS = -4.5V, ID = -2.0A
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
SOT-23
Gate
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Drain
D
TOP VIEW
Source
EQUIVALENT CIRCUIT
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) VGS = -10V
Steady
State
Pulsed Drain Current (Note 3)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
GS
TOP VIEW
Value
-30
±20
-2.7
-2
-8
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.08
115
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Symbol
Min
Typ
Max Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BVDSS
IDSS
IGSS
-30
⎯⎯
V
-800 nA
±80
±800
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
-1.3
-1.8
-2.1
V
Static Drain-Source On-Resistance
RDS (ON)
86
147
100
170
mΩ
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
|Yfs|
VSD
3.6
-1.26
S
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss 227
Coss
64
Crss
36
pF
pF
pF
Notes:
1. Device mounted on FR-4 PCB. t 5 sec.
2. No purposefully added lead.
3. Pulse width 10μS, Duty Cycle 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = -250μA
VDS = -30V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = ±15V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -10V, ID = -2.7A
VGS = -4.5V, ID = -2.0A
VDS = -5V, ID = -2.7A
VGS = 0V, IS = -2.7A
VDS = -10V, VGS = 0V
f = 1.0MHz
DMP3100L
Document number: DS31441 Rev. 3 - 2
1 of 4
www.diodes.com
June 2010
© Diodes Incorporated

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