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What is BM63363S-VA?

This electronic component, produced by the manufacturer "ROHM Semiconductor", performs the same function as "600V IGBT Intelligent Power Module".


BM63363S-VA Datasheet PDF - ROHM Semiconductor

Part Number BM63363S-VA
Description 600V IGBT Intelligent Power Module
Manufacturers ROHM Semiconductor 
Logo ROHM Semiconductor Logo 


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Datasheet
Inverter for motor control
600V IGBT Intelligent Power Module (IPM)
for low speed switching drive
BM63363S-VA BM63363S-VC
General Description
BM63363S-VA/-VC is an Intelligent Power Module
composed of gate drivers, bootstrap diodes, IGBTs, fly
wheel diodes. Low saturation voltage IGBTs optimized
for low speed switching drive (to 6kHz) such as a
compressor is adopted. Please examine high speed
switching series for high speed switching drive.
Key Specifications
IGBT Collector-Emitter Voltage VCESAT: 1.5V(Typ)
FWD Forward Voltage VF:
1.5V(Typ)
FWD Reverse Recovery Time trr:
Module Case Temperature TC:
100ns(Typ)
-25 to +100°C
Junction Temperature Tjmax:
150°C
Features
3phase DC/AC Inverter
600V/10A
Low Side IGBT Open Emitter
Built -in Bootstrap Diode
High Side IGBT Gate Driver(HVIC):
SOI (Silicon On Insulator) Process,
Drive Circuit, High Voltage Level Shifting,
Current Limit for Bootstrap Diode,
Control Supply Under-Voltage Locked Out (UVLO)
Low Side IGBT Gate Driver(LVIC):
Drive Circuit, Short Circuit Current Protection (SCP),
Control Supply Under Voltage Locked Out (UVLO),
Thermal Shutdown (TSD)
Fault Signal(LVIC)
Corresponding to SCP (Low Side IGBT), TSD, UVLO
Fault
Input Interface 3.3V, 5V Line
Package
HSDIP25
HSDIP25VC
HSDIP25
W(Typ) x D(Typ) x H(Typ)
38.0mm x 24.0mm x 3.5mm
38.0mm x 24.0mm x 3.5mm
Application
Low Speed Switching Drive of AC100 to 240Vrms(DC
Voltage: Less Than 400V) Class Motor
Low Speed Switching Drive of Compressor Motor for
Air Conditioner, Washing Machine, Refrigerator
Typical Application Circuit
+
+
+
5V
2 VBU
3 VBV
4 VBW
5 HINU
6 HINV
7 HINW
8 HVCC
9 GND
10 LINU
11 LINV
12 LINW
13 LVCC
15V +
14 FO
15 CIN
16 GND
P 24
U 23
V 22
W 21
NU 20
M
+
NV 19
NW 18
Figure 1. Example of Application Circuit
Product structure: Semiconductor IC This product is not designed for protection against radioactive rays
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/20
TSZ02201-0747AB500070-1-2
11.Nov.2014 Rev.002

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BM63363S-VA equivalent
BM63363S-VA BM63363S-VC
Recommended Operating Conditions
Item Symbol
Supply Voltage
Control Power Supply
VP
VCC
Min
0
13.5
Limit
Typ
300
15.0
Max
400
16.5
Floating Control Power Supply VBS 13.0 15.0 18.5
Control Power Supply Variation
Control Input Voltage
VCC
VBS
VIN
-1
0
- +1
- 5.5
Current Sensing Input Voltage
VCIN
0
- 5.5
Blanking Time for Preventing
Arm-short
tdead
1.5
-
-
PWM Input Frequency
fPWM
-
-
6
High Side IGBT
PWONH
Minimum Input Pulse Width(Note1) PWOFFH
0.8
0.8
-
-
-
-
Low Side IGBT
PWONL
Minimum Input Pulse Width(Note1) PWOFFL
2.5
0.8
-
-
-
-
Voltage Variation Between
GND- NU, NV, NW
VN -5 - +5
Junction Temperature
Tj -25
- +125
(Note 1) IPM might not respond if the input signal pulse width is less than PWON, PWOFF.
Unit Conditions
V
V
V
V/µs
V
V
µs
kHz
µs
µs
µs
µs
V
°C
Applied between P-NU,NV,NW
Applied between
HVCC-GND, LVCC-GND
Applied between
VBU-U, VBV-V, VBW-W
For each input signal
TC 100°C, Tj 125°C
Between GND-NU, NV, NW
(Including surge voltage)
Electrical Characteristics (Unless otherwise specified, Tj=25°C, VCC=VBS=15V, VP=300V)
Inverter Part
Limit
Item Symbol
Unit
Min Typ Max
Collector-Emitter Saturation Voltage
VCESAT
-
-
1.50 1.90 V
0.85 1.15 V
Collector-Emitter Cut-off Current
ICES
-
- 100 µA
FWD Forward Voltage
VF - 1.50 2.00 V
FWD Reverse Recovery Time
trr - 100 - ns
High Side IGBT Turn on Delay Time
tonH 0.50
0.85
1.40 µs
High Side IGBT Turn on Switching Time tc(on)H
-
0.15
- µs
High Side IGBT Turn off Delay Time
toffH -
1.60 2.30 µs
High Side IGBT Turn off Switching Time tc(off)H
-
0.45
- µs
Low Side IGBT Turn on Delay Time
tonL 0.80 1.60 2.50 µs
Low Side IGBT Turn on Switching Time tc(on)L
-
0.20
- µs
Low Side IGBT Turn off Delay Time
toffL - 1.00 1.50 µs
Low Side IGBT Turn off Switching Time tc(off)L
-
0.45
- µs
Conditions
IC=10A
IC=1A
VCE=VCES
IF=10A
Inductive Load, IC=10A
Inductive Load, IC=10A
Inductive Load, IC=10A
Inductive Load, IC=10A
Inductive Load, IC=10A
Inductive Load, IC=10A
Inductive Load, IC=10A
Inductive Load, IC=10A
Inductive Load, IC=10A
HINX
LINX
50%
toff
IC tdoff
90%
tf
VCE
50%
ton
tdon
trr
90%
10% 10%
10%
10%
tc(off)
tc(on)
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
Figure 4. Switching Time Definition
5/20
TSZ02201-0747AB500070-1-2
11.Nov.2014 Rev.002


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Featured Datasheets

Part NumberDescriptionMFRS
BM63363S-VAThe function is 600V IGBT Intelligent Power Module. ROHM SemiconductorROHM Semiconductor
BM63363S-VCThe function is 600V IGBT Intelligent Power Module. ROHM SemiconductorROHM Semiconductor

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