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RF4E075AT fiches techniques PDF

ROHM Semiconductor - Pch -30V -7.5A Middle Power MOSFET Datasheet

Numéro de référence RF4E075AT
Description Pch -30V -7.5A Middle Power MOSFET Datasheet
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RF4E075AT fiche technique
RF4E075AT
  Pch -30V -7.5A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
-30V
21.7mΩ
±7.5A
2W
lFeatures
1) Low on - resistance.
2) High Power small mold Package
(HUML2020L8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
HUML2020L8
      
lInner circuit
   Datasheet
      
 
 
 
      
lApplication
Switching
Load switch
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
TCR
JT
Symbol
VDSS
ID
ID,pulse*1
VGSS
EAS*2
IAS*2
PD*3
Tj
Tstg
Value
-30
±7.5
±30
±20
10.6
-2.7
2
150
-55 to +150
Unit
V
A
A
V
mJ
A
W
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150218 - Rev.001    

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