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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RBR5L40A
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RBR5L40A fiche technique
Schottky Barrier Diode
RBR5L40A
lApplication
General rectification
lDimensions (Unit : mm)
2.6±0.15
Data Sheet
lLand Size Figure (Unit : mm)
2.0
lFeatures
1) Small power mold type
(PMDS)
2) High reliability
3) Low VF
12
1.5±0.2
0.1±0.02
2.0±0.2
PMDS
lStructure
Cathode
ROHM : PMDS
JEDEC : SOD-106
1 2 : Manufacture Date
lConstruction
lTaping Dimensions (Unit : mm)
Silicon epitaxial planar type
2.0±0.05
4.0±0.1
fφ 1.55±0.05
Anode
0.3
2.9±0.1
4.0±0.1
fφ 1.55
2.8MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
40 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load , Tc=45ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at Ta=25ºC
Operating junction temperature
Tj
-
40
5
50
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Conditions
IF=5.0A
VR=40V
Min. Typ. Max. Unit
- - 0.53 V
- - 200 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.04 - Rev.A

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