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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RBR2MM30A
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RBR2MM30A fiche technique
Schottky Barrier Diode
RBR2MM30A
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
1.6±0.1
lLand Size Figure (Unit : mm)
0.1±0.1
    0.05
1.2
lFeatures
1) Small power mold type
(PMDU)
2) High reliability
3) Low VF
lConstruction
Silicon epitaxial planar type
PMDU
0.9±0.1
ROHM : PMDU
JEDEC : SOD-123FL
: Manufacture Date
0.8±0.1
lStructure
Cathode
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φf 1.55±0.05
Anode
0.25±0.05
1.81±0.1
4.0±0.1
φf 1.0±0.1
1.5MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
30 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load , Tc=90ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at Ta=25ºC
Operating junction temperature
Tj
-
30
2
30
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Conditions
IF=2.0A
VR=30V
Min. Typ. Max. Unit
- - 0.53 V
- - 50 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.03 - Rev.A

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