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RB530CM-60 fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB530CM-60
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB530CM-60 fiche technique
Schottky Barrier Diode
RB530CM-60
lApplication
General rectification
lDimensions (Unit : mm)
0.37±0.05
(1)
Data Sheet
lLand Size Figure (Unit : mm)
0.55
lFeatures
1) Small mold type
(VMN2M)
2) High reliability
3) Low VF
lConstruction
Silicon epitaxial planar type
0~0.10
(2) 0.22±0.05
0.60±0.05
0.16±0.05
ROHM : VMN2M
: Manufacture year/ week/ factory
lTaping Dimensions (Unit : mm)
f1.55±0.05
4.0±0.05
2.0±0.05
VMN2M
(1) Cathode
lStructure
(2) Anode
0.2±0.05
2.0±0.05
f0.5±0.05
0.7±0.05
0.47±0.05
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
60 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle
Operating junction temperature
Tj
-
60
100
200
150
V
mA
mA
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
VF1 IF=10mA - 0.47 0.54 V
VF2 IF=15mA - 0.52 0.60 V
IR
VR=60V
- 0.09 1 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.03 - Rev.A

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