DataSheetWiki


RF05VYM1SFH fiches techniques PDF

ROHM Semiconductor - Super Fast Recovery Diode

Numéro de référence RF05VYM1SFH
Description Super Fast Recovery Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





1 Page

No Preview Available !





RF05VYM1SFH fiche technique
Super Fast Recovery Diode
RF05VYM1SFH
Datasheet
Series
Dimensions (Unit : mm)
AEC-Q101 Qualified
Land size figure (Unit : mm)
Standard Fast Recovery
11..34±±00..015
0.17±0.1
   0.05
1.1
Application
High frequency rectification
Features
1) Small mold type (TUMD2M)
2) High speed switching
3) Low forward voltage
0.8±0.05
ROHM : TUMD2M
0.6±0.2
    0.1
dot (year week factory) + day
Construction
Silicon epitaxial planar type
Taping Dimensions (Unit : mm)
TUMD2M
Structure
Cathode
Anode
Absolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
100 V
Reverse voltage
VR Direct voltage
Average current
Io
On glass epoxy substrate
60Hz half sin wave , Resistive load
Non-repetitive forward surge current IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C
100
0.5
6
V
A
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- 55 to 150 °C
Electrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=0.5A - 0.82 0.98 V
Reverse current
IR
VR=100V
- 0.01 10 A
Reverse recovery time
trr IF=0.5A, IR=1A, Irr=0.25×IR - 12 25 ns
Thermal resistance
Rth(j-l)
Junction to lead
- - 30 °C / W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2015.03 - Rev.A

PagesPages 5
Télécharger [ RF05VYM1SFH ]


Fiche technique recommandé

No Description détaillée Fabricant
RF05VYM1SFH Super Fast Recovery Diode ROHM Semiconductor
ROHM Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche