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PDF HY27US16121A Data sheet ( Hoja de datos )
| Número de pieza | HY27US16121A | |
| Descripción | 512Mbit (64M x 8bit / 32M x 16bit) NAND Flash Memory | |
| Fabricantes | Hynix Semiconductor | |
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HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Document Title
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory
Revision History
Revision
No.
0.0
0.1
0.2
History
Draft Date Remark
Initial Draft.
Sep. 2004 Preliminary
1) Correct part number ( change mode)
- 2A -> 1A (sequential row read : disable -> enable)
2) Correct Table.5 & Table 12
- Correct Command Set
- correct AC timing characteristics (tWP : 40 -> 25ns, tWH : 20 ->15ns)
3) Correct Summary description & page.7
- The cache feature is deleted in summary description.
- Note.3 is deleted. (page.7)
4) Add System interface using CE don’t care (page. 38)
5) Change TSOP1, WSOP1,FBGA package dimension & figures.
Oct. 22. 2004
Preliminary
- Change TSOP1, WSOP1, FBGA package mechanical data
- Change TSOP1, WSOP package figures
6) Correct TSOP1, WSOP1 Pin configuration
- 38th NC pin has been changed Lockpre (figure 2,3)
7) Add Bad block Management
1) LOCKPRE is changed to PRE
- Texts, Table and figures are changed.
2) Change Command set
- Read A,B are changed to Read1.
- Read C is changed to Read2.
3) Change AC, DC characterics
- tRB, tCRY, tCEH and tOH are added.
4) Correct Program time (max)
- before : 700us
- after : 500us
5) Edit figures
- Address names are changed.
6) Change FBGA Package Dimension
- FD1 : 1.70(before) -> 0.90(after)
Mar. 08. 2005 Preliminary
Rev 1.1 / Fev. 2006
1
1 page  
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
1. SUMMARY DESCRIPTION
The HYNIX HY27(U/S)S(08/16)121A series is a 64Mx8bit with spare 2Mx8 bit capacity. The device is offered in 1.8V
Vcc Power Supply and in 3.3V Vcc Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old
data is erased.
The device contains 4096 blocks, composed by 32 pages consisting in two NAND structures of 16 series connected
Flash cells.
A program operation allows to write the 512-byte page in typical 200us and an erase operation can be performed in
typical 2ms on a 16Kbyte(X8 device) block.
Data in the page mode can be read out at 50ns cycle time(3.3V device) per byte. The I/O pins serve as the ports for
address and data input/output as well as command input. This interface allows a reduced pin count and easy migration
towards different densities, without any rearrangement of footprint.
Commands, Data and Addresses are synchronously introduced using CE#, WE#, ALE and CLE input pin.
The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where
required, and internal verification and margining of data.
The modifying can be lockde using the WP# input pin.
The output pin RB# (open drain buffer) signals the status of the device during each operation. In a system with mul-
tiple memories the RB# pins can be connected all together to provide a global status signal.
Even the write-intensive systems can take advantage of the HY27(U/S)S(08/16)121A extended reliability of 100K pro-
gram/erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.
Optionally the chip could be offered with the CE# don’t care function. This option allows the direct download of the
code from the NAND Flash memory device by a microcontroller, since the CE# transitions do not stop the read opera-
tion.
The copy back function allows the optimization of defective blocks management: when a page program operation fails
the data can be directly programmed in another page inside the same array section without the time consuming serial
data insertion phase.
This device includes also extra features like OTP/Unique ID area, Block Lock mechanism, Automatic Read at Power Up,
Read ID2 extension.
The HYNIX HY27(U/S)S(08/16)121A series is available in 48 - TSOP1 12 x 20 mm , 48 - USOP1 12 x 17 mm,
FBGA 9 x 11 mm.
1.1 Product List
PART NUMBER
HY27SS08121A
HY27SS16121A
HY27US08121A
HY27US16121A
ORIZATION
x8
x16
x8
x16
VCC RANGE
1.70 - 1.95 Volt
2.7V - 3.6 Volt
PACKAGE
63FBGA / 48TSOP1 / 48USOP1
Rev 1.1 / Fev. 2006
5
5 Page 
HY27US(08/16)121A Series
HY27SS(08/16)121A Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
CLE
ALE
CE#
WE#
RE#
WP#
MODE
H
L
L
H
L Rising H
L Rising H
X
X
Read Mode
Command Input
Address Input(4 cycles)
H
L
L
H
L Rising H
L Rising H
H
H
Write Mode
Command Input
Address Input(4 cycles)
L L L Rising H H Data Input
L L L(1) H Falling X Sequential Read and Data Output
L L L H H X During Read (Busy)
X X X X X H During Program (Busy)
X X X X X H During Erase (Busy)
X X X X X L Write Protect
X X H X X 0V/Vcc Stand By
Table 6: Mode Selection
NOTE:
1. With the CE# don’t care option CE# high during latency time does not stop the read operation
Rev 1.1 / Fev. 2006
11
11 Page | ||
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| PDF Descargar | [ Datasheet HY27US16121A.PDF ] | |
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