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IRFSL3107PbF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRFSL3107PbF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRFSL3107PbF fiche technique
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD -97144A
IRFS3107PbF
IRFSL3107PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
75V
2.5m:
3.0m:
ID (Silicon Limited) 230A c
S ID (Package Limited) 195A
DD
S
G
D2Pak
IRFS3107PbF
S
D
G
TO-262
IRFSL3107PbF
G
G ate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR Avalanche Current d
EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
www.irf.com
Junction-to-Case kl
Junction-to-Ambient (PCB Mount) jk
D
Drain
S
Source
Max.
230c
160
195
900
370
2.5
± 20
14
-55 to + 175
300
10lbxin (1.1Nxm)
300
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
5/2/11

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