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PDF IRFR8314PbF Data sheet ( Hoja de datos )

Número de pieza IRFR8314PbF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
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IRFR8314PbF
Application
Optimized for UPS/Inverter Applications
Low Voltage Power Tools
Benefits
Fully Characterized Avalanche Voltage and Current
Lead-Free, RoHS Compliant
HEXFET® Power MOSFET
 
VDSS
30 V
D
RDS(on) max
(@ VGS = 10V)
2.2
m
G (@ VGS = 4.5V) 3.1
S
Qg (typical)
40 nC
ID (Silicon Limited)
ID (Package Limited)
179
90A
A
D
S
G
D-Pak
G
Gate
D
Drain
S
Source
Base part number Package Type
IRFR8314PbF
D-Pak
Standard Pack
Form
Quantity
Tape and Reel
2000
Absolute Maximum Rating
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case 
RJA Junction-to-Ambient (PCB Mount)
RJA Junction-to-Ambient
Orderable Part Number
IRFR8314TRPbF
Max.
30
± 20
179
127
90
357
125
63
0.83
-55 to + 175  
300
Units
V
A
 
 
 
W
W
W/°C
°C  
Typ.
–––
–––
–––
Max.
1.2
50
110
Units
°C/W  
Notes through are on page 9
1 www.irf.com © 2014 International Rectifier
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July 01, 2014

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IRFR8314PbF pdf
 
8
6
ID = 90A
4
TJ = 125°C
2
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance vs. Gate Voltage
IRFR8314PbF
800
ID
700
TOP
16A
33A
600 BOTTOM 72A
500
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
5 www.irf.com © 2014 International Rectifier
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July 01, 2014

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