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Numéro de référence | E30A2CDS | ||
Description | STACK SILICON DIFFUSED DIODE | ||
Fabricant | KEC | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=30A.
Reverse Voltage : 200V(Min)
POLARITY
E30A2CDS E30A2CDR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
Repetitive Peak Reverse Voltage
Average Forward Current
Peak 1 Cycle Surge Current
VRRM
IF(AV)
IFSM
200
30
300
(10ms Condition)
Junction Temperature
Tj -40 200
Storage Temperature Range
Tstg -40 200
UNIT
V
A
A
E30A2CDS, E30A2CDR
STACK SILICON DIFFUSED DIODE
FE
G
B
A
DIM
A
B
C
D
MILLIMETERS
9.5+_ 0.2
8.4+_ 0.2
1.2
1
DIM
E
F
G
L1
MILLIMETERS
3.1+_ 0.1
Φ1.5
R0.5
5+_ 0.4
DIM TYPE POLARITY
L2 S
R
MILLIMETERS
19.0+_ 1.0
23.0+_ 1.0
PD
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
Reverse Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
Reverse Leakage Current Under
High Temperature
VFM
VRM
IRRM
trr
HIR
Temperature Resistance
Rth
TEST CONDITION
IFM=100A
IR=5mA
VR=200V
IF=-IR 100mA
Ta=150 , VR=VRM
Junction to case
MIN.
-
200
-
-
-
-
TYP.
-
-
-
-
-
1.0
MAX.
1.20
-
50
15
UNIT
V
V
A
S
2.5 mA
- /W
2002. 10. 9
Revision No : 1
1/1
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Pages | Pages 1 | ||
Télécharger | [ E30A2CDS ] |
No | Description détaillée | Fabricant |
E30A2CDR | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) | KEC(Korea Electronics) |
E30A2CDR | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) | KEC(Korea Electronics) |
E30A2CDR | STACK SILICON DIFFUSED DIODE | KEC |
E30A2CDS | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) | KEC(Korea Electronics) |
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