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VS-HFA16PB120PbF fiches techniques PDF

Vishay - Ultrafast Soft Recovery Diode

Numéro de référence VS-HFA16PB120PbF
Description Ultrafast Soft Recovery Diode
Fabricant Vishay 
Logo Vishay 





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VS-HFA16PB120PbF fiche technique
www.vishay.com
VS-HFA16PB120PbF, VS-HFA16PB120-N3
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 16 A
TO-247AC modified
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Designed and qualified
JEDEC-JESD47
according
to
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Cathode
to base
2
1
Cathode
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-247AC modified (2 pins)
16 A
1200 V
3.0 V
30 ns
150 °C
Single die
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA16PB120... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 16 A continuous current,
the VS-HFA16PB120... is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the HEXFRED® product line
features extremely low values of peak recovery current
(IRRM) and does not exhibit any tendency to “snap-off”
during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA16PB120... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VR
IF
IFSM
IFRM
PD
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
TC = 100 °C
VALUES
1200
16
190
64
151
60
- 55 to + 150
UNITS
V
A
W
°C
Revision: 19-Apr-12
1 Document Number: 94057
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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