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PDF FP30R06W1E3 Data sheet ( Hoja de datos )
| Número de pieza | FP30R06W1E3 | |
| Descripción | IGBT-Module | |
| Fabricantes | Infineon | |
| Logotipo |  |
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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FP30R06W1E3
EasyPIM™ModulmitTrench/FeldstoppIGBT3undEmitterControlled3DiodeundNTC
EasyPIM™modulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC
VorläufigeDaten/PreliminaryData
VCES = 600V
IC nom = 30A / ICRM = 60A
TypischeAnwendungen
• Hilfsumrichter
• Klimaanlagen
• Motorantriebe
ElektrischeEigenschaften
• NiedrigeSchaltverluste
• TrenchIGBT3
• VCEsatmitpositivemTemperaturkoeffizienten
• NiedrigesVCEsat
MechanischeEigenschaften
• Al2O3 Substrat mit kleinem thermischen
Widerstand
• KompaktesDesign
• Lötverbindungstechnik
• Robuste Montage durch integrierte
Befestigungsklammern
TypicalApplications
• AuxiliaryInverters
• AirConditioning
• MotorDrives
ElectricalFeatures
• LowSwitchingLosses
• TrenchIGBT3
• VCEsatwithpositiveTemperatureCoefficient
• LowVCEsat
MechanicalFeatures
• Al2O3SubstratewithLowThermalResistance
• Compactdesign
• SolderContactTechnology
• Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:DK
approvedby:MB
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
dateofpublication:2013-10-03
revision:2.1
ULapproved(E83335)
1
1 page  
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FP30R06W1E3
Diode,Brems-Chopper/Diode,Brake-Chopper
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
Dauergleichstrom
ContinuousDCforwardcurrent
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V
Rückstromspitze
Peakreverserecoverycurrent
IF = 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)
VR = 300 V
Sperrverzögerungsladung
Recoveredcharge
IF = 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)
VR = 300 V
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)
VR = 300 V
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VorläufigeDaten
PreliminaryData
VRRM 600 V
IF 10 A
IFRM
I²t
20
12,5
9,50
A
A²s
A²s
VF
IRM
Qr
Erec
RthJC
min. typ. max.
1,60 2,00
1,55
1,50
V
V
V
18,0
19,0
21,0
A
A
A
0,50 µC
0,85 µC
1,10 µC
0,11 mJ
0,20 mJ
0,26 mJ
2,90 3,20 K/W
RthCH
1,40
K/W
Tvj op
-40
150 °C
NTC-Widerstand/NTC-Thermistor
CharakteristischeWerte/CharacteristicValues
Nennwiderstand
Ratedresistance
TC = 25°C
AbweichungvonR100
DeviationofR100
TC = 100°C, R100 = 493 Ω
Verlustleistung
Powerdissipation
TC = 25°C
B-Wert
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B-Wert
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B-Wert
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
AngabengemäßgültigerApplicationNote.
Specificationaccordingtothevalidapplicationnote.
min. typ. max.
R25 5,00 kΩ
∆R/R -5
5%
P25 20,0 mW
B25/50
3375
K
B25/80
3411
K
B25/100
3433
K
preparedby:DK
approvedby:MB
dateofpublication:2013-10-03
revision:2.1
5
5 Page 
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FP30R06W1E3
Schaltplan/circuit_diagram_headline
VorläufigeDaten
PreliminaryData
J
Gehäuseabmessungen/packageoutlines
Infineon
preparedby:DK
approvedby:MB
dateofpublication:2013-10-03
revision:2.1
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet FP30R06W1E3.PDF ] | |
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