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PDF BH2228FV Data sheet ( Hoja de datos )
| Número de pieza | BH2228FV | |
| Descripción | D/A Converters | |
| Fabricantes | ROHM Semiconductor | |
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Datasheet
D/A Converters
Standard 8bit 4ch 6ch Type
BH2227FV BH2228FV
General Description
The BH2227FV and BH2228FV ICs are 8bit R-2R-type
D/A converters with 4 and 6 channels, respectively.
Optimized circuitry allows two output voltages to be
supplied (3V/5V). Furthermore, the built-in RESET
function ensures that the output voltage at all channels
is LOW during power up. A broad power supply voltage
range is available (2.7V to 5.5V), providing design
flexibility.
Key Specifications
Power Source Voltage Range:
Current Consumption:
Differential Non Linearity Error:
Integral non Linearity Error:
Output current Performance:
Settling Time:
Data Transfer Frequency:
Action Temperature Range:
2.7V to 5.5V
0.8mA(Typ)
±1.0LSB
±1.5LSB
±1.0mA
100µs(Min)
10MHz(Max)
-20°C to +85°C
Features
■ Suitable for 2 independent power sources (3V/5V)
■ Built-in RESET function
■ High speed output response characteristics
■ 3-line serial interface
Package
W(Typ) x D(Typ) x H(Max)
Applications
DVCs, DSCs, DVDs, CD-Rs, CD-RWs
SSOP-B14
5.00mm x 6.40mm x 1.35mm
Lineup
Number of channels
4ch
6ch
Input method
CMOS
Data latch method
CSB method
Package
SSOP-B14 Reel of 2500
Orderable Part Number
BH2227FV-E2
BH2228FV-E2
○Product structure：Silicon monolithic integrated circuit
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product has no designed protection against radioactive rays
1/14
TSZ02201-0M2M0GZ15080-1-2
06.Nov.2015 Rev.001
1 page  
BH2227FV BH2228FV
Typical Performance Curves
0.6
0.5
0.4
0.3
0.2
85°C
25°C
-20°C
0.1
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
SUPPSuLpYplVy OVoLltTagAeG: EVD:VD D[VD] [V]
Figure 4. Circuit Current vs Supply Voltage
(VDD Current Consumption)
3.0
VDD=3.0V
2.5
2.0
1.5
1.0
0.5
0.0
0
64 128 192
INPInUpTut CCoOdeD[Ede[cd]ec]
256
Figure 6. Output Voltage vs Input Code
0.6
0.5
0.4
0.3
0.2
85°C
25°C
-20°C
0.1
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
SUPPSuLpYplVy OVoLltTagAeG: EVF:VS [FVS] [V]
Figure 5. Circuit Current vs Supply Voltage
(VFS Current Consumption)
0.4
VDD=3.0V
0.3
0.2
0.1
0.0
-0.1
-0.2
-0.3
-0.4
0
64 128 192
INInPpUutTCoCdOe [DdeEc][dec]
256
Figure 7. Differential Non Linearity Error vs Input Code
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/14
TSZ02201-0M2M0GZ15080-1-2
06.Nov.2015 Rev.001
5 Page 
BH2227FV BH2228FV
Operational Notes – continued
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
Pin A
P+
NN
Parasitic
Elements
avoided.
Resistor
Pin A
P P+
NN
P Substrate
GND
Parasitic
Elements
Pin B
C
N P+
Parasitic
Elements
Transistor (NPN)
B Pin B
E
N P N P+ N
B
P Substrate
GND GND
N Region
close-by
C
E
Parasitic
Elements
GND
Figure 17. Example of monolithic IC structure
13. Reset Function
The power on reset circuit, which initializes internal settings, may malfunction during abrupt power ons.
Therefore, set the time constant so as to satisfy the power source rise time.
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
11/14
TSZ02201-0M2M0GZ15080-1-2
06.Nov.2015 Rev.001
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet BH2228FV.PDF ] | |
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