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PDF P4NC50 Data sheet ( Hoja de datos )

Número de pieza P4NC50
Descripción STP4NC50
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! P4NC50 Hoja de datos, Descripción, Manual

STP4NC50
STP4NC50FP
N-CHANNEL 500V - 2.2- 3.5A TO-220/TO-220FP
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP4NC50
500 V < 2.7
3.5 A
STP4NC50FP
500 V < 2.7
3.5 A
s TYPICAL RDS(on) = 2.2
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
October 2000
Value
Unit
STP4NC50 STP4NC50FP
500 V
500 V
±30 V
3.5
3.5(*)
A
2.2
2.2(*)
A
14
14(*)
A
80 40 W
0.64
0.32 W/°C
3.5 V/ns
-
2000
V
–65 to 150
°C
150
(1)ISD 3.5A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
(*).Limited only by maximum temperature allowed
°C
1/9

1 page




P4NC50 pdf
Gate Charge vs Gate-source Voltage
Capacitance Variations
STP4NC50/FP
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9

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