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Numéro de référence | RFN10T2D | ||
Description | Super Fast Recovery Diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Data Sheet
Super Fast Recovery Diode
RFN10T2D
Applications
General rectification
Features
1)Cathode common Dual type. (TO-220)
2)Low VF
3)Low switching loss
Construction
Silicon epitaxial planer
Dimensions (Unit : mm)
10.0±0.3
0.1
4.5±0.3
0.1
2.8±0.2
0.1
RFN10
T2D ①
1.2 ①
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
ROHM : TO220FN
① dot (year week factory)
2.6±0.5
Structure
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
VRM
VR
Average rectified forward current
Io
Forward current surge peak
Junction temperature
Storage temperature
IFSM
Tj
Tstg
Conditions
Duty≤0.5
Limits
200
Direct voltage
200
60Hz half sin wave, Resistance load,
Tc=122°C
1/2Io at per diode
10
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
80
150
55 to 150
Unit
V
V
A
A
C
C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Forward voltage
Reverse current
Reverse recovery time
VF
IR
trr
Thermal Resistance
Rth(j-c)
* per diode
Conditions
IF=5A
VR=200V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
Min.
-
-
-
-
Typ.
0.90
0.01
15
-
Max.
0.98
10
25
2.5
Unit
V
μA
ns
°C/W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.12 - Rev.A
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Pages | Pages 7 | ||
Télécharger | [ RFN10T2D ] |
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