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ROHM Semiconductor - Super Fast Recovery Diode

Numéro de référence RFN10T2D
Description Super Fast Recovery Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RFN10T2D fiche technique
Data Sheet
Super Fast Recovery Diode
RFN10T2D
Applications
General rectification
Features
1)Cathode common Dual type. (TO-220)
2)Low VF
3)Low switching loss
Construction
Silicon epitaxial planer
Dimensions (Unit : mm)
10.0±0.3
    0.1
4.5±0.3
    0.1
2.8±0.2
    0.1
RFN10
T2D
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
ROHM : TO220FN
dot (year week factory)
2.6±0.5
Structure
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
VRM
VR
Average rectified forward current
Io
Forward current surge peak
Junction temperature
Storage temperature
IFSM
Tj
Tstg
Conditions
Duty0.5
Limits
200
Direct voltage
200
60Hz half sin wave, Resistance load,
Tc=122°C
1/2Io at per diode
10
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
80
150
55 to 150
Unit
V
V
A
A
C
C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Forward voltage
Reverse current
Reverse recovery time
VF
IR
trr
Thermal Resistance
Rth(j-c)
* per diode
Conditions
IF=5A
VR=200V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
Min.
Typ.
0.90
0.01
15
Max.
0.98
10
25
2.5
Unit
V
μA
ns
°C/W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.12 - Rev.A

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