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PDF IRFF320 Data sheet ( Hoja de datos )
| Número de pieza | IRFF320 | |
| Descripción | HEXFET TRANSISTORS | |
| Fabricantes | International Rectifier | |
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Hay una vista previa y un enlace de descarga de IRFF320 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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PD -90428D
IRFF320
JANTX2N6792
REPETITIVE AVALANCHE AND dv/dt RATED
JANTXV2N6792
HEXFET®TRANSISTORS
REF:MIL-PRF-19500/555
THRU-HOLE (TO-205AF)
400V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on)
IRFF320
400V 1.8Ω
ID
2.0A
The HEXFET®technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the Art”
design achieves: very low on-state resistance combined with
high transconductance.
The HEXFET transistors also feature all of the well established
advantages of MOSFETs such as voltage control, very fast
switching, ease of parelleling and temperature stability of the
electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
T0-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
2.0
1.25
10
A
20 W
0.16
W/°C
±20 V
0.242
mJ
2.2 A
2.0 mJ
4.0
-55 to 150
V/ns
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
For footnotes refer to the last page
www.irf.com
1
08/07/07
1 page  
IRFF320, JANTX2N6792, JANTXV2N6792
Fig9. MaximumDrainCurrentVs.
CaseTemperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFF320.PDF ] | |
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