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PDF JCS11N90WT Data sheet ( Hoja de datos )
| Número de pieza | JCS11N90WT | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | JILIN SINO-MICROELECTRONICS | |
| Logotipo |  |
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N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS11N90WT
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 11 A
VDSS 900 V
Rdson（@Vgs=10V） 1.10 Ω
Qg 66 nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 22pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 22pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
JCS11N90WT-O-W-N-B JCS11N90WT
封装
Package
TO-247
无卤素
Halogen
Free
否 NO
包
装
Packaging
条管 Tube
器件重量
Device
Weight
5.20g(typ)
版本：201202A
1/8
1 page  
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS11N90WT
On-Region Characteristics
VGS
Top 15V
10V
9V
8V
7V
10 6.5V
6V
5.5V
Bottom 5V
Notes:
1 1. 250μs pulse test
2. TC=25℃
1 10
V DS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
1.4
1.2
Transfer Characteristics
10
150℃
1
25℃
Notes:
1.250μs pulse test
2.VDS=40V
0.1
2 4 6 8 10
V G S [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
VGS=10V
1.0
VGS=20V
0.8 Note:Tj=25℃
0 2 4 6 8 10 12 14 16 18
I D [A]
Capacitance Characteristics
20
150℃
1
25℃
Notes:
1. 250μs pulse test
2. VGS=0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
VS D [V]
Gate Charge Characteristics
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss=Cgs+Cgd(Cds=shorted)
Ciss
Coss=Cds+Cgd
Crss=Cgd
Coss
Crss
100 101
V DS Drain-Source Voltage [V]
12
10 VDS=720V
VDS=450V
8 VDS=180V
6
4
2
*Note：Id=11A
0
0 10 20 30 40 50 60 70
Qg Toltal Gate Charge [nC]
版本：201202A
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet JCS11N90WT.PDF ] | |
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