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PDF JCS4N80FH Data sheet ( Hoja de datos )
| Número de pieza | JCS4N80FH | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | JILIN SINO-MICROELECTRONICS | |
| Logotipo |  |
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N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS4N80H
主要参数 MAIN CHARACTERISTICS
封装 Package
ID
VDSS
Rdson-max
（@Vgs=10V）
Qg-typ
用途
z 高频开关电源
z 电子镇流器
z LED 电源
4A
800 V
2.5 Ω
14nC
APPLICATIONS
z High frequency switch
mode power supply
z Electronic ballasts
z LED power supply
产品特性
z低栅极电荷
z低 Crss (典型值 9pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 9pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
JCS4N80CH-O-C-N-B
JCS4N80FH-O-F-N-B
JCS4N80CH
JCS4N80FH
封装
Package
TO-220C
TO-220MF
无卤素
Halogen
Free
否 NO
否 NO
包
装
Packaging
条管 Tube
条管 Tube
器件重量
Device
Weight
2.15 g(typ)
2.20 g(typ)
版本：201510C
1/10
1 page  
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS4N80H
On-Region Characteristics
Transfer Characteristics
On-Resistance Variation vs.
Drain Current and Gate Voltage
10
150℃
1
25℃
Notes:
1.250μs pulse test
2.VDS=40V
0.1
2 4 6 8 10
V G S [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
Capacitance Characteristics
2x103
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
1x103
Coss
Ciss
Crss
0
10-1 100 101
V DS Drain-Source Voltage [V]
150℃
1
25℃
Notes:
1. 250μs pulse test
2. VGS=0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
VS D [V]
Gate Charge Characteristics
版本：201510C
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet JCS4N80FH.PDF ] | |
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