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PDF JCS10N70FH Data sheet ( Hoja de datos )
| Número de pieza | JCS10N70FH | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | JILIN SINO-MICROELECTRONICS | |
| Logotipo |  |
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N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS10N70H
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 10A
VDSS 700 V
Rdson（@Vgs=10V） 1.10 Ω
Qg 55.0nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High frequency switch
mode power supply
z Electronic ballasts
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 10pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 10pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
JCS10N70CH
JCS10N70FH
印记
Marking
JCS10N70CH
JCS10N70FH
封装
Package
TO-220C
TO-220MF
无卤素
Halogen
Free
否 NO
否 NO
包装
Packaging
条管 Tube
条管 Tube
器件重量
Device
Weight
2.15 g(typ)
2.20 g(typ)
版本：201406D
1/10
1 page  
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS10N70H
On-Region Characteristics
VGS
Top 15V
10V
9V
8V
7V
10 6.5V
6V
5.5V
Bottom 5V
Notes:
1 1. 250μs pulse test
2. TC=25℃
1 10
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Transfer Characteristics
10
150℃
25℃
1
Notes:
1.250μs pulse test
2.VDS=20V
0.1
2 3 4 5 6 7 8 9 10
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
2.0
10
1.5
VGS=20V
VGS=10V
1.0
Note:Tj=25℃
0 2 4 6 8 10 12 14 16 18 20
ID [A]
Capacitance Characteristics
22
25℃
1
150℃
Notes:
1. 250μs pulse test
2. VGS=0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD [V]
Gate Charge Characteristics
10000
1000
100
*Note:
1. VGS=0V
10 2. f=1 MHz
1 Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
0.1 Crss=Cgd
10-1 100 101
V DS Drain-Source Voltage [V]
Coss
Ciss
Crss
12
10
8
6
4
2
0
0
VDS=560V
VDS=350V
VDS=120V
*NOTE:ID=10A
10 20 30 40
Qg Toltal Gate Charge [nC]
50
版本：201406D
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet JCS10N70FH.PDF ] | |
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