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PDF 30ETU12 Data sheet ( Hoja de datos )
| Número de pieza | 30ETU12 | |
| Descripción | Ultrafast Soft Recovery Diode | |
| Fabricantes | nELL | |
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Hay una vista previa y un enlace de descarga de 30ETU12 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SEMICONDUCTOR
30ETU12 RRooHHSS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode
30A/1200V
Available
RoHS*
COMPLIANT
FEATURES
Ultrafast recovery
Ultrasoft recovery
Ver low lRRM
Ver low Qrr
Compliant to RoHS
Designed and qualified for industrial level
Planar FRED Chip
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION
30ETU12 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features
a superb combination of characteristics which result
in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200V
and 30A continuous current, the 30ETU12 is
especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultrafast
recovery time, the FRED product line features
extremely low values of peak recovery current (IRRM)
and does not exhibit any tendency to “snap-off” during
the tb portion of recovery. The FRED features combine
to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode
and the switching transistor. These FRED advantages
can help to significantly reduce snubbing, component
count and heatsink sizes. The FRED 30ETU12
is ideally suited for applications in power supplies and
conversion systems (such as inverters), motor drives,
and many other similar applications where high speed,
high efficiency is needed.
30ETU12
30ATU12
Base
cathode
2
Base
cathode
2
13
Cathode Anode
TO-220AC Modified
13
Anode Anode
TO-220AB
PRODUCT SUMMARY
VR
VF at 30A at 25 °C
IF(AV)
trr (typical)
TJ (maximum)
Qrr
1200 V
2.35 V
30 A
38 ns
175 °C
545 nC
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage temperature range
SYMBOL
VR
IF
IFSM
IFRM
TJ, TStg
TEST CONDITIONS
TC= 100 ºC
TC= 25 ºC
VALUES
1200
30
280
100
- 55 to 175
UNITS
V
A
ºC
www.nellsemi.com
Page 1 of 6
1 page  
SEMICONDUCTOR
30ETU12 RRooHHSS
Nell High Power Products
Fig.9 Reverse recovery parameter test circuit
Fig.10 Reverse recovery waveform and definitions
www.nellsemi.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 30ETU12.PDF ] | |
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