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PDF 30EPU12 Data sheet ( Hoja de datos )

Número de pieza 30EPU12
Descripción Ultrafast Soft Recovery Diode
Fabricantes nELL 
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No Preview Available ! 30EPU12 Hoja de datos, Descripción, Manual

SEMICONDUCTOR
30EPU12 Series RRooHHSS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode
30A / 1200V
FEATURES
Ultrafast recovery
150°C operating junction temperature
Designed and qualified for industrial level
Compliant to RoHS
Planar FRED Chip
BENEFITS
Reduced RFI and EMI
Higher frequency operation
Reduced snubbing
Reduced parts count
30EPU12
30APU12
Cathode
to base
2
Cathode
to base
2
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/
RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
1
Cathode
3
Anode
TO-247AC modified
PRODUCT SUMMARY
trr
IF(AV)
VR
1
Anode
3
Anode
TO-247AB
36 ns
30 A
1200 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Operating junction and storage temperatures
SYMBOL
VR
lF(AV)
lFSM
Tj, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
VALUES
1200
30
280
- 55 to 150
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(TJ = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
Breakdown voltage
VBR lR = 100µA
1200
lF = 30A
-
Forward voltage
VF lF = 60A
-
lF = 30A, TJ = 125°C
-
Reverse leakage current
lR VR = VR rated
TJ = 150°C, VR = VR rated
-
-
Junction capacitance
Series inductance
CT VR = 200V
LS Measure lead to lead 5mm from package body
-
-
TYP.
-
1.95
2.60
-
1.0
-
30
10
MAX.
-
2.35
-
2.00
25
1000
-
-
UNITS
V
µA
pF
nH
www.nellsemi.com
Page 1 of 6

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30EPU12 pdf
SEMICONDUCTOR
30EPU12 Series RRooHHSS
Nell High Power Products
Fig.9 Reverse recovery parameter test circuit
Fig.10 Reverse recovery waveform and definitions
www.nellsemi.com
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