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KEC - STACK SILICON DIFFUSED DIODE

Numéro de référence E65A21VBS
Description STACK SILICON DIFFUSED DIODE
Fabricant KEC 
Logo KEC 





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E65A21VBS fiche technique
SEMICONDUCTOR
TECHNICAL DATA
E65A21VBS, E65A21VBR
STACK SILICON DIFFUSED DIODE
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=65A.
Zener Voltage : 21V(Typ.)
POLARITY
E65A21VBS (+ Type)
E65A21VBR (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
IF(AV)
IFSM
Non-Repetitive Peak
Reverse Surge Current (10mS)
IRSM
Transient Peak Reverse Voltage
Peak Reverse Voltage
Junction Temperature
VRSM
VRM
Tj
Storage Temperature Range
Tstg
RATING
65
450 (60Hz)
65
19
16
-40 215
-40 215
UNIT
A
A
A
V
V
A
K
H
EI
JD
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00
Φ1.3+_ 0.04
4.2+_ 0.2
8.0+_ 0.2
TYP 0.5
Φ10.0+_ 0.2
0.4 +_ 0.1x45
8.5 MAX
0.2+0.1
28.35+_ 0.5
F
G
B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Zener Voltage
VF
VZ
Reverse Current
IR
Transient Thermal Resistance
Breakdown Voltage
Reverse Leakage Current Under
High Temperature
VF
Vbr
HIR
Temperature Resistance
Rth
TEST CONDITION
IFM=100A
IZ=10mA
VR=20V
IFM=100A, IM=100mA, Pw=100mS
Irsm=65A, Pw=10mS
Ta=150 , VR=20V
DC total junction to case
MIN.
-
19
-
-
-
-
-
TYP.
-
21
-
-
-
-
-
MAX.
1.05
23
0.3
50
34
UNIT
V
V
A
mV
V
100 A
0.5 /W
2004. 3. 11
Revision No : 0
1/1

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