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PDF 3135GN-280LV Data sheet ( Hoja de datos )
| Número de pieza | 3135GN-280LV | |
| Descripción | S-Band Radar | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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3135GN-280LV
280 Watts • 50 Volts • 200 s, 20%
S-Band Radar 3100 - 3500 MHz
GENERAL DESCRIPTION
The 3135GN-280LV is an internally matched, COMMON SOURCE,
class AB, GaN on SiC HEMT transistor capable of providing over 13 dB
gain, 280 Watts of pulsed RF output power at 200 S pulse width, 20%
duty factor across the 3100 to 3500 MHz band. This hermetically sealed
transistor is utilizes gold metallization and eutectic attach to provide
highest reliability and superior ruggedness.
Market Application – High Power S-Band Pulsed Radar
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C
616 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS)
Gate-Source Voltage (VGS)
125 V
-8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG)
-55 to +125 C
Operating Junction Temperature +250 C
CASE OUTLINE
55-KP
Common Source
ELECTRICAL CHARACTERISTICS @ 25C
Symbol
Characteristics
Test Conditions1
Min Typ Max Units
Pout
Output Power
Pin=14.1W, Freq=3100,3300,3500 MHz 280 330
W
Gp Power Gain
Pin=14.1W, Freq=3100,3300,3500 MHz 13 13.7
dB
D Drain Efficiency
Dr Droop
Pin=14.1W, Freq=3100,3300,3500 MHz
Pin=14.1W, Freq=3100,3300,3500 MHz
50 58
0.2 0.5
%
dB
VSWR-T
Өjc
Load Mismatch Tolerance
Pin=14.1W, Freq=3100 MHz
3:1
Thermal Resistance
Pulse Width=200 S, Duty=20%
.39
1 Bias Condition: Vdd=+50V, Idq=100mA constant current (Vgs= -2.0 ~ -4.5V typical)
°C/W
FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off)
Drain leakage current
VgS = -8V, VD = 50V
IG(Off)
BVDSS
Gate leakage current
Drain-Source breakdown
voltage
VgS = -8V, VD = 0V
Vgs =-8V, ID = 36mA
36 mA
6 mA
125 V
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
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| PDF Descargar | [ Datasheet 3135GN-280LV.PDF ] | |
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