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PDF LX7710 Data sheet ( Hoja de datos )
| Número de pieza | LX7710 | |
| Descripción | 125V Octal Series Diode Pairs Array | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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LX7710
125V Octal Series Diode Pairs Array with
Redundancy
Description
The LX7710 is a diode array that features high
breakdown voltage diodes with ESD protection and
built-in redundancy. The array contains 8 series
connected diode pairs, and is intended for power
ORing applications. The series connected diodes are
intended to be redundant should one of the diodes fail
in a short circuit. Individual diodes within the array
have 125V working voltage and can handle up to
700mA of continuous current. ESD protection is also
included; the two series ESD diodes have a working
voltage of 100V each for a total of 200V. The LX7710
is available in a 20 pin ceramic SOIC package and is
screened to MIL-PRF-38535 Class V, or Class B
requirements.,
Features
125V Minimum Breakdown Voltage Even If
One Diode in Any String Happens to Fail
(redundant)
700mA Current Capability per Diode
Low Leakage Current
ESD Protected
Rad-tolerant to a Minimum 100krad(Si) TID
and SEL Immunity to a Minimum of 87MeV
cm2/mg
Applications
Power ORing
Redundant Power Sourcing
Aerospace Satellite Manufacturers
Military Power Electronics Control
Levels Available
MIL-PRF-38535 Class B
MIL-PRF-38535 Class V
VS1
1 AAHS298B
SEL_CH1_VS1 2
SEL_CH2_VS1 3
SEL_CH3_VS1 4
SEL_CH4_VS1 5
SEL_CH5_VS1 6
SEL_CH6_VS1 7
SEL_CH7_VS1 8
SEL_CH8_VS1 9
10
VS1
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10 LX7710
20
19
18
17
16
15
14
13
12
11
11 10
12 9
13 8
14 7
15 6
16 5
17 4
18 3
19 2
20 LX7710 1
CH1 Power Bus
CH2 Power Bus
CH3 Power Bus
CH4 Power Bus
CH5 Power Bus
CH6 Power Bus
CH7 Power Bus
CH8 Power Bus
Figure 1 · Product Highlight of Redundant Switchable Power Bus
December 2015 Rev. 1.0
© 2015 Microsemi Corporation
www.microsemi.com
VS2
11 10
12 9 SEL_CH1_VS2
13 8 SEL_CH2_VS2
14 7 SEL_CH3_VS2
15 6 SEL_CH4_VS2
16 5 SEL_CH5_VS2
17 4 SEL_CH6_VS2
18 3 SEL_CH7_VS2
19 2 SEL_CH8_VS2
20 AAHS298B 1
VS2
1
1 page  
Thermal Properties
Thermal Properties
Thermal Resistance
Typ Units
Thermal Resistance-Junction to Case, θJC
2.24 °C/W
Note: The θJC number is for conduction only to the ceramic base of the package. It assumes that the ceramic base has a
thermal epoxy underneath the ceramic package to exhaust the heat from the package into the PCB, or other mounting
surface.
Electrical Characteristics
Unless otherwise noted, these specifications apply TJ = 25°C. Low duty cycle pulse testing is used
which keeps junction and case temperatures equal to the ambient temperature.
Symbol
VBR_G-A
VBR_K-A
VBR_A-G
Parameter
Reverse Breakdown
Reverse Breakdown
ESD Breakdown
VFWD_A-K Forward Voltage
IR Reverse Current
C Capacitance
Test Condition
IR = 10µA; GND to anode
IR = 10µA; K to A
IR = 10µA; anode to GND
IF = 100mA
IF = 350mA
IF = 700mA
IF = 700mA at 125°C
IF = 700mA at -55C
VR = 75V; GND to A
VR = 75V at 125°C; GND to A
VR = 0V at f = 1MHz; K to A
Min
125
125
125
1.49
1.65
1.80
1.64
1.91
10
Typ Max Units
V
1.54 1.61
1.74 1.86
1.92 2.08 V
1.76 1.84
2.07 2.24
100 nA
50 µA
15 30 pF
LX7710 Rev 1.0
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet LX7710.PDF ] | |
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