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IRGIB10B60KD1P fiches techniques PDF

International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR

Numéro de référence IRGIB10B60KD1P
Description INSULATED GATE BIPOLAR TRANSISTOR
Fabricant International Rectifier 
Logo International Rectifier 





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IRGIB10B60KD1P fiche technique
PD - 94913
IRGIB10B60KD1P
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control.
G
E
n-channel
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
VCES = 600V
IC = 10A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.7V
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
cICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VISOL
RMS Isolation Voltage, Terminal to Case, t = 1 min
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
RθJC Junction-to-Case- IGBT
RθJC Junction-to-Case- Diode
RθCS
Case-to-Sink, flat, greased surface
RθJA Junction-to-Ambient, typical socket mount
Wt Weight
www.irf.com
TO-220
Full-Pak
Max.
600
16
10
32
32
16
10
32
2500
±20
44
22
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf.in (1.1N.m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0
Max.
3.4
5.3
–––
62
–––
Units
°C/W
g
1
12/29/03

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