|
|
PDF IRGB4045DPbF Data sheet ( Hoja de datos )
| Número de pieza | IRGB4045DPbF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRGB4045DPbF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
PD - 97269A
IRGB4045DPbF
C
G
E
n-channel
C
VCES = 600V
IC = 6.0A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.7V
G
Gate
E
C
G
TO-220AB
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
IF@TC=25°C
IF@TC=100°C
IFM
VGE
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
cPulsed Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC =25°
PD @ TC =100°
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Parameter
eJunction-to-Case - IGBT
eJunction-to-Case - Diode
Case-to-Sink, flat, greased surface
eJunction-to-Ambient, typical socket mount
1
Max.
600
12
6.0
18
24
8.0
4.0
24
± 20
± 30
77
39
-55 to + 175
Units
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Min.
—
—
—
—
Typ.
—
—
0.5
—
Max.
1.94
6.30
—
62
Units
°C/W
www.irf.com
01/28/2010
1 page  
400
350
300
250
200 EOFF
150
100 EON
50
0 2 4 6 8 10 12 14
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47Ω; VGE = 15V.
220
200 EOFF
180
160
140 EON
120
100
80
60
0
25 50 75 100 125
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15V
30
25
RG = 10Ω
20
15 RG = 22Ω
10 RG = 47Ω
5 RG = 100Ω
0
2 4 6 8 10 12 14
IF (A)
www.irf.com
Fig. 17 - Typical Diode IRR vs. IF
TJ = 175°C
IRGB4045DPbF
1000
tdOFF
100
tF
tdON
10
tR
1
2 4 6 8 10 12 14
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 47Ω; VGE= 15V
1000
tdOFF
100
tF
tdON
10
tR
1
0 25 50 75 100 125
RG (Ω)
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
ICE= 6.0A; VGE= 15V
22
20
18
16
14
12
10
8
6
0 25 50 75 100 125
RG (Ω)
Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C; IF = 6.0A
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRGB4045DPbF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRGB4045DPbF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |