DataSheetWiki


IRG8P40N120KDPbF fiches techniques PDF

International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR

Numéro de référence IRG8P40N120KDPbF
Description INSULATED GATE BIPOLAR TRANSISTOR
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRG8P40N120KDPbF fiche technique
 
VCES = 1200V
IC = 40A, TC =100°C
IRG8P40N120KDPbF
IRG8P40N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  C 
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 25A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Benchmark Low VCE(ON)
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high ILM- rating
Lead-Free, RoHS compliant
G
E
n-channel
E
GC
GCE
IRG8P40N120KDPbF  IRG8P40N120KDEPbF 
TO247AC 
TO247AD 
G
Gate
C
Collector
E
Emitter
Benefits 
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Environmentally friendly
Base part number
IRG8P40N120KDPbF
IRG8P40N120KD-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG8P40N120KDPbF
IRG8P40N120KD-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
60
40
75
100
40
20
100
±30
305
120
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.41
0.91
–––
40
Units
V
A
V
W
C
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 30, 2014

PagesPages 11
Télécharger [ IRG8P40N120KDPbF ]


Fiche technique recommandé

No Description détaillée Fabricant
IRG8P40N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche