|
|
PDF IRG8P08N120KDPbF Data sheet ( Hoja de datos )
| Número de pieza | IRG8P08N120KDPbF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRG8P08N120KDPbF (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
IRG8B08N120KDPbF
IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
VCES = 1200V
IC = 8A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 5A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Benchmark Low VCE(ON)
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high ILM- rating
Lead-Free, RoHS compliant
G
E
n-channel
GCE
TO-220AB
IRG8B08N120KDPbF
GCE
TO-247AC
IRG8P08N120KDPbF
GC E
TO-247AD
IRG8P08N120KD-EPbF
G
Gate
C
Collector
E
Emitter
Benefits
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Environmentally friendly
Base part number
IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
IRG8B08N120KDPbF
Package Type
TO-247AC
TO-247AD
TO-220AB
Standard Pack
Form
Quantity
Tube
25
Tube
25
Tube
50
Orderable Part Number
IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
IRG8B08N120KDPbF
Absolute Maximum Ratings
Parameter
Max.
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
IFM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
1200
15
8
15
20
11
6
±30
20
89
36
-40 to +150
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Typ. Max.
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-220AB
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-247
RCS
Thermal Resistance, Case-to-Sink (flat, greased surface)TO-220AB
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-220AB
RCS
Thermal Resistance, Case-to-Sink (flat, greased surface)TO-247
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-247
––– 1.3
––– 2.6
––– 1.4
––– 2.6
0.50 –––
––– 62
0.24 –––
––– 40
Units
V
A
V
W
C
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
1 page  
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
11.0
10.5
10.0
9.5
9.0
VCC = 600V
Tj = 150°C
VGE = 15V
IF = 5A
RG = 47
RG =
RG = 148
RG = 220
500
RG = 47
400 RG = 100
RG = 148
RG = 220
300
200
100
8.5
350 400 450 500 550 600
diF /dt (A/µs)
0
0 2 4 6 8 10
IF (A)
Fig. 12 - Fig. 12 - Typ. IRR vs. di/dt
Fig. 13 - Typ. Diode ERR vs. IF
TJ = 150°C
100
10
-40°C
1
25°C
150°C
0.1
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VF (V)
Fig. 14 - Typ. Diode Forward Voltage Drop
Characteristics
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
5 Page 
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE:
THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
IRFPE30
135H
56 57
PART NUMBER
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IRG8P08N120KDPbF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRG8P08N120KDPbF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |