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PDF IRG7PSH50UDPbF Data sheet ( Hoja de datos )
| Número de pieza | IRG7PSH50UDPbF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97548
IRG7PSH50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
C
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Ultra fast soft recovery co-pak diode
G
• Tight parameter distribution
• Lead-Free
Benefits
E
n-channel
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
Applications
• U.P.S.
• Welding
• Solar Inverter
• Induction Heating
G
Gate
VCES = 1200V
I NOMINAL = 50A
TJ(max) = 150°C
VCE(on) typ. = 1.7V
C
E
GC
Super-247
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
116
70
50
150
200
116
70
200
±30
462
185
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.27
0.37
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
07/28/2010
1 page  
IRG7PSH50UDPbF
12 200
10
8 ICE = 25A
6
ICE = 50A
ICE = 100A
4
2
0
0 5 10 15
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
12000
10000
8000
6000
EON
20
150
100
TJ = 25°C
TJ = 150°C
50
0
0 2 4 6 8 10
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 30µs
1000
tdOFF
tF
100
4000
2000
EOFF
0
0 20 40 60 80 100
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 5.0Ω; VGE = 15V
16000
14000
12000
EOFF
10000
8000
EON
6000
4000
2000
0
0 20 40 60 80 100
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 50A; VGE = 15V
tdON
10
0
tR
20 40 60
IC (A)
80 100
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 5.0Ω; VGE = 15V
10000
1000
tdOFF
tF
100 tR
tdON
10
0
20 40 60 80 100
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 50A; VGE = 15V
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