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PDF S-8200A Data sheet ( Hoja de datos )
| Número de pieza | S-8200A | |
| Descripción | BATTERY PROTECTION IC | |
| Fabricantes | Seiko Instruments | |
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S-8200A Series
www.sii-ic.com
© Seiko Instruments Inc., 2010-2014
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.4.0_00
The S-8200A Series is a protection IC for lithium-ion / lithium polymer rechargeable batteries and includes high-accuracy
voltage detection circuits and delay circuits.
The S-8200A Series is suitable for protecting 1-cell lithium-ion / lithium polymer rechargeable battery packs from overcharge,
overdischarge, and overcurrent.
Features
• High-accuracy voltage detection circuit
Overcharge detection voltage
3.5 V to 4.5 V (5 mV step)
Accuracy ±20 mV (Ta = +25°C)
Overcharge release voltage
3.1 V to 4.5 V*1
Accuracy ±25 mV (Ta = −10°C to +60°C)
Accuracy ±30 mV
Overdischarge detection voltage
Overdischarge release voltage
2.0 V to 3.4 V (10 mV step)
2.0 V to 3.4 V*2
Accuracy ±35 mV
Accuracy ±50 mV
Discharge overcurrent detection voltage
0.05 V to 0.20 V (10 mV step) Accuracy ±10 mV
Charge overcurrent detection voltage
−0.20 V to −0.05 V (25 mV step) Accuracy ±15 mV
• Detection delay times are generated only by an internal circuit (external capacitors are unnecessary).
Accuracy ±20%
• High-withstand voltage device is used for charger connection pins
(VM pin and CO pin: Absolute maximum rating = 28 V)
• 0 V battery charge function "available" / "unavailable" is selectable.
• Power-down function "available" / "unavailable" is selectable.
• Wide operation temperature range
Ta = −40°C to +85°C
• Low current consumption
During operation
2.8 μA typ., 5.0 μA max. (Ta = +25°C)
During power-down
0.1 μA max. (Ta = +25°C)
• Lead-free (Sn 100%), halogen-free
*1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage
(Overcharge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.4 V in 50 mV step.)
*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage
(Overdischarge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.7 V in 100 mV step.)
Applications
• Lithium-ion rechargeable battery pack
• Lithium polymer rechargeable battery pack
Packages
• SOT-23-6
• SNT-6A
Seiko Instruments Inc.
1
1 page  
Rev.4.0_00
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8200A Series
Table 4
Delay Time
Combination
Overcharge
Detection
Delay Time
[tCU]
Overdischarge
Detection
Delay Time
[tDL]
Discharge Overcurrent
Detection
Delay Time
[tDIOV]
Load Short-circuiting
Detection
Delay Time
[tSHORT]
Charge Overcurrent
Detection
Delay Time
[tCIOV]
(1)
1.0 s
64 ms
8 ms
250 μs
8 ms
(2)
1.0 s
32 ms
8 ms
250 μs
8 ms
(3)
256 ms
32 ms
8 ms
250 μs
16 ms
(4)
1.0 s
128 ms
8 ms
250 μs
8 ms
(5)
1.0 s
128 ms
16 ms
500 μs
16 ms
(6)
1.0 s
128 ms
16 ms
250 μs
8 ms
Remark The delay times can be changed within the range listed in Table 5. For details, please contact our sales office.
Delay Time
Symbol
Overcharge detection delay time
tCU
Overdischarge detection delay time
tDL
Discharge overcurrent detection delay time tDIOV
Load short-circuiting detection delay Time tSHORT
Charge overcurrent detection delay time
tCIOV
*1. This value is the delay time of the standard product.
Table 5
Selection Range
256 ms 512 ms 1.0 s*1
32 ms 64 ms*1 128 ms
4 ms
8 ms*1
16 ms
250 μs*1 500 μs
1 ms
4 ms
8 ms*1
16 ms
Remark
Select a value from the left.
Select a value from the left.
Select a value from the left.
Select a value from the left.
Select a value from the left.
Seiko Instruments Inc.
5
5 Page 
Rev.4.0_00
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8200A Series
8. Resistance between VM pin and VDD pin
(Test circuit 3)
RVMD is the resistance between VM pin and VDD pin under the set conditions of V1 = 1.8 V, V2 = 0 V.
9. Resistance between VM pin and VSS pin
(Test circuit 3)
RVMS is the resistance between VM pin and VSS pin under the set conditions of V1 = 3.4 V, V2 = 1.0 V.
10. CO pin resistance "H"
(Test circuit 4)
The CO pin resistance "H" (RCOH) is the resistance between VDD pin and CO pin under the set conditions of V1 = 3.4 V,
V2 = 0 V, V3 = 3.0 V.
11. CO pin resistance "L"
(Test circuit 4)
The CO pin resistance "L" (RCOL) is the resistance between VM pin and CO pin under the set conditions of V1 = 4.6 V,
V2 = 0 V, V3 = 0.4 V.
12. DO pin resistance "H"
(Test circuit 4)
The DO pin resistance "H" (RDOH) is the resistance between VDD pin and DO pin under the set conditions of V1 = 3.4 V,
V2 = 0 V, V4 = 3.0 V.
13. DO pin resistance "L"
(Test circuit 4)
The DO pin resistance "L" (RDOL) is the resistance between VSS pin and DO pin under the set conditions of V1 = 1.8 V,
V2 = 0 V, V4 = 0.4 V.
14. Overcharge detection delay time
(Test circuit 5)
The overcharge detection delay time (tCU) is the time needed for VCO to go to "L" just after the voltage V1 increases and
exceeds VCU under the set conditions of V1 = 3.4 V, V2 = 0 V.
15. Overdischarge detection delay time
(Test circuit 5)
The overdischarge detection delay time (tDL) is the time needed for VDO to go to "L" after the voltage V1 decreases and
falls below VDL under the set conditions of V1 = 3.4 V, V2 = 0 V.
16. Discharge overcurrent detection delay time
(Test circuit 5)
The discharge overcurrent detection delay time (tDIOV) is the time needed for VDO to go to "L" after the voltage V2
increases and exceeds VDIOV under the set conditions of V1 = 3.4 V, V2 = 0 V.
Seiko Instruments Inc.
11
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