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PDF IRLS3813PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLS3813PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
Benefits
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
IRLS3813PbF
HEXFET® Power MOSFET
D
VDSS
30V
RDS(on) typ.
1.60m
G max 1.95m
ID (Silicon Limited)
247A
S ID (Package Limited) 160A
D
G
Gate
S
G
D2Pak
IRLS3813PbF
D
Drain
S
Source
Base part number Package Type
IRLS3813PbF
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRLS3813PbF
IRLS3813TRLPbF
Absolute Maximum Rating
Symbol
VDS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
TJ
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
Symbol
Parameter
EAS (Thermally limited) Single Pulse Avalanche Energy
IAR Avalanche Current
Thermal Resistance
Symbol
Parameter
RJC
Junction-to-Case
RJA Junction-to-Ambient (PCB Mount)
Max.
30
247
156
160
850
195
1.6
± 20
-55 to + 150
300
Max.
177
148
Typ.
–––
–––
Max.
0.64
40
Units
V
A
W
W/°C
V
°C
Units
mJ
A
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 23, 2014
1 page  
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
IRLS3813PbF
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Single Avalanche Current vs. pulse Width
1.0E-01
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 23, 2014
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRLS3813PBF.PDF ] | |
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