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Numéro de référence | IRLR8729PBF-1 | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TC = 25°C)
30 V
8.9 mΩ
10 nC
f58 A
IRLR8729PbF-1
HEXFET® Power MOSFET
DD
G
S
S
G
D-Pak
IRLR8729PbF-1
Features
Industry-standard pinout D-Pak and I-Pak
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRLR8729PbF-1
D-Pak
Standard Pack
Form
Quantity
Tape and Reel
2000
Tape and Reel Left
3000
Orderable Part Number
IRLR8729TRPbF-1
IRLR8729TRLPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gMaximum Power Dissipation
gMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gÃRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Max.
30
± 20
58f
41f
260
55
27
0.37
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
–––
Max.
2.73
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
1
www.irf.com © 2014 International Rectifier
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June 29, 2014
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Pages | Pages 10 | ||
Télécharger | [ IRLR8729PBF-1 ] |
No | Description détaillée | Fabricant |
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