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International Rectifier - RADIATION HARDENED POWER MOSFET

Numéro de référence 2N7590T3
Description RADIATION HARDENED POWER MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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2N7590T3 fiche technique
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
PD-96930C
2N7590T3
IRHYS67134CM
150V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHYS67134CM 100K Rads (Si)
IRHYS63134CM 300K Rads (Si)
RDS(on)
0.090
0.090
ID
19A
19A
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Low-Ohmic
TO-257AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
19
12
76
75
0.6
±20
67
19
7.5
7.8
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
01/31/14

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