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PDF JANSR2N7520T3 Data sheet ( Hoja de datos )
| Número de pieza | JANSR2N7520T3 | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
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PD-96911A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
IRHYS597034CM
JANSR2N7520T3
60V, P-CHANNEL
REF: MIL-PRF-19500/732
5 TECHNOLOGY
Part Number
IRHNJ597034CM
IRHNJ593034CM
Radiation Level
100K Rads (Si)
300K Rads (Si)
RDS(on)
0.08Ω
0.08Ω
ID
-20A
-20A
QPL Part Number
JANSR2N7520T3
JANSF2N7520T3
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Low-Ohmic
Features:
TO-257AA
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-20
-13 A
-80
75 W
0.6 W/°C
±20 V
134 mJ
-20 A
7.5 mJ
-4.9 V/ns
-55 to 150
°C
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
02/11/15
1 page  
Pre-Irradiation
IRHYS597034CM, JANSR2N7520T3
2500
2000
1500
1000
VGS = 0V, f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
500
0
1
Crss
10
-VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = -20A
16
12
VDS= -48V
VDS= -30V
VDS= -12V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50 60
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150°C
10
TJ = 25°C
1
0.1
0
VGS = 0V
12345
-VSD , Source-to-Drain Voltage (V)
6
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10ms
DC
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet JANSR2N7520T3.PDF ] | |
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