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International Rectifier - RADIATION HARDENED POWER MOSFET

Numéro de référence IRHYS597034CM
Description RADIATION HARDENED POWER MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRHYS597034CM fiche technique
PD-96911A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
IRHYS597034CM
JANSR2N7520T3
60V, P-CHANNEL
REF: MIL-PRF-19500/732
5 TECHNOLOGY
™
Part Number
IRHNJ597034CM
IRHNJ593034CM
Radiation Level
100K Rads (Si)
300K Rads (Si)
RDS(on)
0.08
0.08
ID
-20A
-20A
QPL Part Number
JANSR2N7520T3
JANSF2N7520T3
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Low-Ohmic
Features:
TO-257AA
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-20
-13 A
-80
75 W
0.6 W/°C
±20 V
134 mJ
-20 A
7.5 mJ
-4.9 V/ns
-55 to 150
°C
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
02/11/15

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