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PDF IRHYB67134CM Data sheet ( Hoja de datos )
| Número de pieza | IRHYB67134CM | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
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PD-96997
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number Radiation Level RDS(on)
IRHYB67134CM 100K Rads (Si) 0.09Ω
IRHYB63134CM 300K Rads (Si) 0.09Ω
ID
19A
19A
IRHYB67134CM
150V, N-CHANNEL
TECHNOLOGY
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Low-Ohmic
TO-257AA (Tab-less)
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
19
12 A
76
75 W
0.6 W/°C
±20 V
67 mJ
19 A
7.5 mJ
7.8
-55 to 150
V/ns
oC
300 (0.063 in. /1.6 mm from case for 10s)
3.7 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
05/09/05
1 page  
Pre-Irradiation
IRHYB67134CM
2800
2400
2000
1600
1200
VGS = 0V, f = 1 MH1z00KHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
800
400 Crss
0
1
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
ID = 19A
16
12
VDS = 120V6
VDS = 75V
VDS = 30V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
60
100
TJ = 150°C
10
1
TJ = 25°C
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD , Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µs
1 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100 1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHYB67134CM.PDF ] | |
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