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2N7599T3 Datasheet دیتاشیت PDF دانلود

دیتاشیت - International Rectifier - RADIATION HARDENED POWER MOSFET

شماره قطعه 2N7599T3
شرح مفصل RADIATION HARDENED POWER MOSFET
تولید کننده International Rectifier 
آرم International Rectifier 


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2N7599T3 شرح
PD-95837B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
2N7599T3
IRHY67C30CM
600V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHY67C30CM 100K Rads (Si)
IRHY63C30CM 300K Rads (Si)
RDS(on)
3.0
3.0
ID
3.4A
3.4A
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
TO-257AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
3.4
2.1
13.6
75
0.6
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
±20
97
3.4
7.5
8.1
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 (0.063 in. /1.6 mm from case for 10s)
°C
Weight
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
08/05/15

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