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BLU6H0410L-600P fiches techniques PDF

NXP Semiconductors - Power LDMOS transistor

Numéro de référence BLU6H0410L-600P
Description Power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLU6H0410L-600P fiche technique
BLU6H0410L-600P;
BLU6H0410LS-600P
Power LDMOS transistor
Rev. 2 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for radar transmitter applications and industrial
applications in the frequency range of 400 MHz to 900 MHz.
Table 1. Application information
Typical RF performance at VDS = 50 V; in a common source 860 MHz narrowband test circuit;
unless otherwise specified.
Test signal
f
IDq
PL(AV)
PL(M)
Gp
D IMD3
(MHz) (mA) (W)
(W) (dB) (%) (dBc)
pulsed, class-AB [1]
860 1.3 -
600 20 58 -
[1] Measured at = 10 %; tp = 1 ms.
1.2 Features and benefits
Excellent ruggedness (VSWR 40 : 1 through all phases)
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
High power gain
High efficiency
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Power amplifier for radar transmitter applications in the 400 MHz to 900 MHz
frequency range

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