|
|
Datasheet BLS7G2729LS-350P-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
BLS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BLS2731-10 | Microwave power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
M3D324
BLS2731-10 Microwave power transistor
Product specification Supersedes data of 1998 Mar 06 1998 Nov 25
Philips Semiconductors
Product specification
Microwave power transistor
FEATURES • Suitable for short and medium pulse applications • Internal  NXP Semiconductors transistor | | |
| 2 | BLS2731-110 | Microwave power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLS2731-110 Microwave power transistor
Product specification Supersedes data of 1997 Nov 05 1998 Jan 30
Philips Semiconductors
Product specification
Microwave power transistor
FEATURES • Suitable for short and medium pulse applications • Internal input a NXP Semiconductors transistor | | |
| 3 | BLS2731-20 | Microwave power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
M3D324
BLS2731-20 Microwave power transistor
Product specification Supersedes data of 1998 Mar 06 1998 Nov 25
Philips Semiconductors
Product specification
Microwave power transistor
FEATURES • Suitable for short and medium pulse applications • Internal NXP Semiconductors transistor | | |
| 4 | BLS2731-50 | Microwave power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLS2731-50 Microwave power transistor
Product specification Supersedes data of 1997 Nov 05 1998 Jan 30
Philips Semiconductors
Product specification
Microwave power transistor
FEATURES • Suitable for short and medium pulse applications • Internal input an NXP Semiconductors transistor | | |
| 5 | BLS2933-100 | Microwave power LDMOS transistor
BLS2933-100
Microwave power LDMOS transistor
Rev. 01 — 1 August 2006 Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.
Table 1: Typ NXP Semiconductors transistor | | |
| 6 | BLS3135-10 | Microwave power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
M3D324
BLS3135-10 Microwave power transistor
Product specification 2000 Feb 01
Philips Semiconductors
Product specification
Microwave power transistor
FEATURES • Suitable for short and medium pulse applications • Internal input and output matching netwo NXP Semiconductors transistor | | |
| 7 | BLS3135-20 | Microwave power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D259
BLS3135-20 Microwave power transistor
Product specification 2000 Feb 01
Philips Semiconductors
Product specification
Microwave power transistor
FEATURES • Suitable for short and medium pulse applications • Internal input and output match NXP Semiconductors transistor | |
| Esta página es del resultado de búsqueda del BLS7G2729LS-350P-PDF.HTML. Si pulsa el resultado de búsqueda de BLS7G2729LS-350P-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |