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NXP Semiconductors - Power LDMOS transistor

Numéro de référence BLP8G10S-45PG
Description Power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLP8G10S-45PG fiche technique
BLP8G10S-45P;
BLP8G10S-45PG
Power LDMOS transistor
Rev. 1 — 25 July 2013
Product data sheet
1. Product profile
1.1 General description
The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power
transistors for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Application performance
Typical RF performance at Tcase = 25 C; IDq = 224 mA in common source class-AB production
circuit.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
960 28 2.5 20.8 19.8 49 [1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF;
carrier spacing = 5 MHz; per section unless otherwise specified.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation (700 MHz to 1000 MHz)
Excellent thermal stability
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
W-CDMA
LTE
GSM

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