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NXP Semiconductors - Power LDMOS transistor

Numéro de référence BLP15M7160P
Description Power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLP15M7160P fiche technique
BLP15M7160P
Power LDMOS transistor
Rev. 3 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
A 160W LDMOS RF power transistor for broadcast transmitter and industrial
applications. The transistor is suitable for the frequency range HF to 1500 MHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1. Typical performance
RF performance at Th = 25 C in a common source test circuit.
Test signal
f
VDS
IDq
PL(AV)
(MHz) (V) (mA) (W)
pulsed, class-B
860
28 100
-
PL(M)
(W)
160
Gp
(dB)
20
D
(%)
62
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the HF to 1500 MHz frequency range
Industrial applications in the HF to 1500 MHz frequency range
Single product Doherty applications

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