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BLL8H1214L-500 fiches techniques PDF

NXP Semiconductors - LDMOS L-band radar power transistor

Numéro de référence BLL8H1214L-500
Description LDMOS L-band radar power transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLL8H1214L-500 fiche technique
BLL8H1214L-500;
BLL8H1214LS-500
LDMOS L-band radar power transistor
Rev. 2 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB
production test circuit.
Test signal
f
VDS
PL
Gp
D tr
tf
(GHz)
(V)
(W) (dB)
(%) (ns)
(ns)
pulsed RF
1.2 to 1.4
50 500 17
50 20
6
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range

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