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Número de pieza | BLL8H0514-25 | |
Descripción | Power LDMOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! BLL8H0514-25
Power LDMOS transistor
Rev. 1 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information
Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Test signal f
tp VDS PL Gp RLin D Pdroop(pulse) tr
(MHz)
(s) (%) (V) (W) (dB) (dB) (%) (dB)
(ns)
tf
(ns)
pulsed RF 960 to 1215 128 10 50 25 21 10 58 0.05
86
1200 to 1400 300 10 50 25 19 10 50 0.05
86
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (0.5 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1] Connected to flange.
Simplified outline Graphic symbol
[1]
V\P
1 page NXP Semiconductors
BLL8H0514-25
Power LDMOS transistor
8. Test information
8.1 Performance curves
3/
:
DDN
3LP:
VDS = 50 V; IDq = 50 mA; tp = 300 s; = 10 %.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 3. Output power as a function of input power;
typical values
*S
G%
DDN
3/:
VDS = 50 V; IDq = 50 mA; tp = 300 s; = 10 %.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 4. Power gain as a function of output power;
typical values
BLL8H0514-25
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 11
5 Page NXP Semiconductors
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 2
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 3
7.2 Impedance information . . . . . . . . . . . . . . . . . . . 3
7.3 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5
8.1 Performance curves . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Handling information. . . . . . . . . . . . . . . . . . . . . 8
11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Contact information. . . . . . . . . . . . . . . . . . . . . 10
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLL8H0514-25
Power LDMOS transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 February 2015
Document identifier: BLL8H0514-25
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet BLL8H0514-25.PDF ] |
Número de pieza | Descripción | Fabricantes |
BLL8H0514-25 | Power LDMOS transistor | NXP Semiconductors |
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